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●Fast switching
●100% avalanche tested
●Improved dv/dt capability
Description
lThis Power MOSFET is produced using advanced TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features
lVDS= 30V，ID=90A
lRDS（ON）TYP = 3.6mΩ @ VGS =10V
lRDS（ON）TYP = 5.3mΩ @VGS =4.5V
lVery Low On-resistance RDS(ON)
lLow Crss
lFast switching
l100% avalanche tested
lImproved dv/dt capability
Application
lPortable Equipment and Battery Powered systems
lPower Management in Notebook Computer
| File Name | Title | Description |
|---|---|---|
| SL90P03G PDFN3X3-8L.pdf | SL90P03G PDFN3X3-8L | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
● Ultra Low Gate Charge cause lower driving requirements ● 100% Avalanche Tested ● ROHS compliant
● Ultra Low Gate Charge cause lower driving requirements ● 100%Avalanche Tested ● ROHS compliant
Fast switching 100% avalanche tested Improved dv/dt capability
100% Avalanche Tested Fast Switching Improved dv/dt Capability
Type: N-channel Vdss:650V Id: 8A RDS(on)@Vgs,Id: 550mΩ@10V,2.5A Vgs(th)@Id: 4.5V@250μA Pd: 69W
Ultra fast switching 100% avalanche tested Improved dv/dt capability
High ruggedness Fast switching 100% avalanche tested
Low gate charge(typical19.6nC) Lower Gate Resistance 100% Avalanche Tested
