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● Low gate Charge
● Fast switching capability
● High reliability and rugged
Dual N-ChannelPower MOSFET
FEATURES
● 20V 5A N-channel Trench MOSFET
RDS(ON)≤27mΩ@VGS=4.5V,Id=5A
RDS(ON)≤36mΩ@VGS=2.5V,Id=3A
● Low gate Charge
● Fast switching capability
● High reliability and rugged
APPLIACTION
● Portable Equipment
● Battery Powered System
| File Name | Title | Description |
|---|---|---|
| SL8205S.PDF | SL8205S | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
● Low Gate Charge ● Low On-resistance ● Surface Mount Package
● Ultra Low Gate Charge cause lower driving requirements ● 100% Avalanche Tested ● ROHS compliant
● Ultra Low Gate Charge cause lower driving requirements ● 100%Avalanche Tested ● ROHS compliant
Fast switching 100% avalanche tested Improved dv/dt capability
100% Avalanche Tested Fast Switching Improved dv/dt Capability
Type: N-channel Vdss:650V Id: 8A RDS(on)@Vgs,Id: 550mΩ@10V,2.5A Vgs(th)@Id: 4.5V@250μA Pd: 69W
Ultra fast switching 100% avalanche tested Improved dv/dt capability
High ruggedness Fast switching 100% avalanche tested
