Display 3D model
Service hotline
+86 0755-83044319
● Trench Power LV MOSFET technology
● High density cell design for low RDS(ON)
● High Speed switching
Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
General Description
The SL4882A N-Channel Enhancement MOSFET, housed in an SOP-8 package, is engineered to deliver high performance in a range of electronic applications. With its impressive specifications, including a low on-resistance and high drain current capability, the SL4882A is designed for efficient switching and power management in both consumer and industrial devices.
Features
● Trench Power LV MOSFET technology
● High density cell design for low RDS(ON)
● High Speed switching
Applications
● Battery protection
● Load switch
● Power management
| File Name | Title | Description |
|---|---|---|
| SL4882A SOP-8.pdf | SL4882A SOP-8 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
● Green Device Available ● Excellent CdV/dt effect decline ● Advanced high cell densityTrench technology
● Green device available. ● Advanced high cell denity trenchtechnology for ultra low RDS(on) ● Excellent package for good heat dissipation.
100%Avalanche Tested Fast Switching Improved dv/dt Capability
100% Avalanche Tested Fast Switching Improved dv/dt Capability
Fast Switching Low ON Resistance Low Gate Charge
Perfect for low-side switching and control tasks Suitable for a variety of moderate current applications Efficient switching with minimal power loss and heat generation
Excellent package for good heat dissipation Fully characterized avalanche voltage and current Special process technology for high ESD capability
