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● Low Gate Charge: The MOSFET features a low gate charge (Qg) of 5.2nC at 10V, ensuring efficient switching performance.
● High Temperature Tolerance: With a wide operating temperature range of -55°C to +150°C, it is suitable for use in harsh environments.
● Low Capacitance: It offers low input capacitance (Ciss) of 490pF and low reverse transfer capacitance (Crss) of 68pF, which enhances high-frequency performance.
SL3409 P-channel power MOSFET
| Characteristic | Symbol | Max | Unit |
| Drain-SourceVoltage | BVDSS | -30 | V |
| Gate-SourceVoltage | VGS | 20 | V |
| DrainCurrent(continuous) | ID | -2.2 | A |
| TotalDeviceDissipation | PD | 1000 | mW |
| TA=25℃ |
| File Name | Title | Description |
|---|---|---|
| SL3409.pdf | SL3409 | - |
| SL250N04Q-PDFN56.pdf | SL250N04Q PDFN56 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| REACH.pdf | REACH | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation
● TrenchFET Power MOSFET
● High dense cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum ● DC current capability
● Low Profile (<1.1mm) ● Available in Tape and Reel ● Fast Switching
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
● PVM applications ● Load switch ● Power management
●Halogen-free According to lEC 61249-2-21 Available ●TrenchFET? Power MOSFET
