Display 3D model
Service hotline
+86 0755-83044319
● Super high design for extremely low RDS(ON)
● Full RoHS compiance
● SOT23-3L package design
Description
The SL2314 is the NChannel logic enhancement mode power field effect transistor is produced usinghigh cell density advanced trench technology.This high density process is especially tailored tominimize on-state resistance. These devices areparticularly suited for low voltage application, and low in-ine power loss are needed in a very small.outline surface mount package.
Features
l20V/4.5A, RDS(ON)=25mΩ(typ.)@VGS=4.5V
l20V/2.5A, RDS(ON)=55mΩ(typ.)@VGS=2.5V
l20V/2.0A,RDS(ON)=80mΩ(typ.)@VGS=1.8V
lSuper high design for extremely low RDS(ON)
lFull RoHS compiance
lSOT23-3L package design
Applications
lPower Management
lPortable Equipment
lDC/DC Converter
lLoad Switch
lDSC
lLCD Display inverter
| File Name | Title | Description |
|---|---|---|
| SL2314 SOT-23-3L.pdf | SL2314 SOT-23-3L | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
● Ultra Low Gate Charge cause lower driving requirements ● 100% Avalanche Tested ● ROHS compliant
● Ultra Low Gate Charge cause lower driving requirements ● 100%Avalanche Tested ● ROHS compliant
Fast switching 100% avalanche tested Improved dv/dt capability
100% Avalanche Tested Fast Switching Improved dv/dt Capability
Type: N-channel Vdss:650V Id: 8A RDS(on)@Vgs,Id: 550mΩ@10V,2.5A Vgs(th)@Id: 4.5V@250μA Pd: 69W
Ultra fast switching 100% avalanche tested Improved dv/dt capability
High ruggedness Fast switching 100% avalanche tested
Low gate charge(typical19.6nC) Lower Gate Resistance 100% Avalanche Tested
