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Type: N-Channel
Vdss: 60V
Id: 5A
RDS(on)@Vgs,Id: 120mΩ@20V,5A
Vgs(th)@Id: 1V@250μA
Pd: 1.2W
Description
lTrench Power MV MOSFET technology.
lExcellent package for heat dissipation.
lHigh density cell design for low RDS(ON).
Applications
lDC/DC Converters
lPower management functions
| File Name | Title | Description |
|---|---|---|
| SL05N06A SOT-223.pdf | SL05N06A SOT-223 | - |
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The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON)
Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(on)
● Ultra Low Gate Charge cause lower driving requirements ● 100% Avalanche Tested ● ROHS compliant
● Ultra Low Gate Charge cause lower driving requirements ● 100%Avalanche Tested ● ROHS compliant
Fast switching 100% avalanche tested Improved dv/dt capability
100% Avalanche Tested Fast Switching Improved dv/dt Capability
Type: N-channel Vdss:650V Id: 8A RDS(on)@Vgs,Id: 550mΩ@10V,2.5A Vgs(th)@Id: 4.5V@250μA Pd: 69W
Ultra fast switching 100% avalanche tested Improved dv/dt capability
