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Research on the problem of silicon substrate of nitride outer outer extension

Abstract: With the continuous breakthrough of silicon -based nitrogen nitrogening technology, the problem of localization of its dedicated silicon substrate materials is increasingly prominent. Analysis of the problem of dense and cracking of the vertical sliding line of domestic films, and proposed the marginal control and mechanical strength control parameters and technical indicators of silicon wafers, which pointed out that the development of high -quality silicon lining with high -quality silicon lining for power device -grade nitrogen -nitrogen lava is pointed out. The direction. Nitride has the characteristics of high saturation electronic rate and breakdown voltage and high temperature resistance. It can be used to make high -temperature, high -frequency and high -power electronic devices (FET, HEMT) running in extremely harsh environments. It is applied to Wireless Station , Satellite communication and other fields [1-2]. Especially in the past ten years, the distribution of wide -band semiconductor materials and devices represented by GAN
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Reveal! How to turn the sand into 99.999999999%purity chip raw material silicon wafer

Reveal! How to turn the sand into 99.9999999999%of the purity chip raw material silicon high purity single crystal silicon wafer is the basic material for making various chips. To 9 9, even 12 9), and single crystal, that is, the silicon atomic lattice is unified. Of course, the purity mentioned here is generally only considering the purity without metal impurities, excluding impurities such as oxygen and carbon. If you pay more attention to the chip, you should know that these highly purity monocrystalline silicon wafers are made from sand. Today we will look at the specific manufacturing process. It is about the industrial silicon production process of Zhengerbajing, so
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Can the MOS tube current direction be reversed? How big can the body diodes be too large?

Two questions today: 1. Can the MOS tube drive current be reversed? D to S, S to D? 2. How much can the MOS tube diodes be too large? Why are there these two questions? When we first learned the MOS tube, we should start with NMOS, and the direction of the current is from D to S. In actual application circuits, NMOS will have currents from S to D. For example, the following NMOS tube anti -power supply reflux circuit (just a schematic diagram, the actual circuit needs to consider some factors). I still say about the principle first. 1. When the power supply is connected normally
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Isolation power and noise

In harsh or strong electronic interference environments, such as the industrial environment and production assembly lines, in these systems, mechanical equipment, high -frequency equipment, spark machines, etc. will produce various interference and noise to affect the normal work of other power supply. Out of the requirements for purifying power supply, such as the requirements for precision instrument equipment with high power quality requirements, especially sensors and weak signal collection, the use of DC isolation power supply is a common and common method. DC (or noise) isolation power is the first to switch the power supply, and ripples and noise are its basic problems. How to effectively reduce and reduce ripples and noise is a problem that DC (or noise) isolation of the power supply must face and solve. This article analyzes and discussed this issue on the basis of experiments. Figure 1 is a FL
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How to choose the MOSFET of the switching power supply, it is enough to read this!

The MOSFET choice of the DC/DC switch controller is a complex process. Just considering the rated voltage and current of MOSFET is not enough to choose the appropriate MOSFET. To keep MOSFET within the specified range, a balance must be achieved between the low gate charge and the low -conducting resistance. In a multi -load power system, this situation will become more complicated. Figure 1 -Anti -voltage synchronous switching voltage voltage voltage voltage diagram DC/DC switching power supply is widely used in many modern electronic systems due to its high efficiency. For example, at the same time, there is a high -side FET and low -side FET antihypertensive synchronous switching staber, as shown in Figure 1. These two fets will be controlled according to control
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DAC conversion+computing amplifier multiplication digital mold converter

Most digital converters (DACs) work in a fixed positive base voltage, and the output voltage or current is proportional to the multiplication of the reference voltage and the set digital digital. For the so -called multiplication digital modulus (MDAC), the situation is not the case. The reference voltage can change, and the range of changes is usually u0026 plusmn; 10 V. Therefore, the benchmark voltage and digital digits can affect the analog output (both are dynamic in these two cases). Apply with the corresponding wiring, the module can output signal enlarged, attenuated or reversed (relative to the benchmark signal). Therefore, its application areas include waveform generators, programmable filters and PGAs (programmable gain amplifiers), and other applications that must adjust or gain
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Why does the MOS tube connect the diode in parallel?

The MOS tube is the abbreviation of MOSFET. The whole fight is the Metal-Oxide-Semiconductor Field-Effect Transistor. The translated is a metal-oxide semiconductor field effect transistor. According to the difference in conductive channels, MOS can be subdivided into two types: NMOS and PMOS. Essence The figure below is a schematic diagram of NMOS. From the red box in the figure, it can be seen that MOS connects a diode in parallel between D and S pole. Some people say that this diode is a parasitic diode. Some people say that it is the body diode. Which one is accurate? Many classmates are also very curious: Why should I connect this diode in parallel? Can it be deleted? This should start with the process and structure of MOS, no
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A formula hit the world, ASML director explains the key technology

At the launching ceremony of the Shanghai Station of "Chasing Laboratory The invisible champion has become an online celebrity company that can talk about a few words, and can see reports and topics related to ASML almost every day. Gao Weimin, the technical director of ASML China, even summarized the description of ASML in media reports. He said that the image of professional media is impressive. This method makes the public understand well and the professionalism is in place. ASML China President Shen Bo, but after all, the light carvings are extremely complex and exquisite, and there are the most complicated precision instruments of human beings.
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One article talks with transparent electrostatic discharge (ESD) protection

I have always wanted to tell you about the theory of ESD, which is classic. However, because the theoretical is too strong, any theory is one by one. If you do not draw eggs, you will not draw David. Let's talk about what is the electrostatic discharge (ESD: Electrostatic Discharge)? This should be the main culprit that causes all electronic components or integrated circuit systems to cause excessive electrical stability destruction. Because the electrostatic voltage is usually very high (u003e thousands of volts), this damage is devastating and permanent, which will cause the circuit to burn directly. So preventing static damage is the number one problem for all IC design and manufacturing. Static electricity is usually produced by artificially, such as production, assembly, testing, storage, and transportation.
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Count the development of foreign diamond semiconductor materials and devices

The research and application of ultra -wide -wide procedure semiconductor materials (forbidden bandwidthu003e 4.5 E V) represented by diamond, oxide, aluminum nitride, and boron nitride, etc., has continuously obtained technological breakthroughs in recent years. This type of semiconductor material has higher bandwidth, thermal conductivity, and material stability. It has significant advantages and huge development potential in the new generation of deep ultraviolet light electrical components, high -voltage high -power electronic devices and other fields. New hotspot. As a member of the ultra -broadband gap semiconductor material (5.5 E V width), it has excellent physical and chemical properties, such as high carrier migration rate, high thermal guidance rate, high -cut electric field, high carrier saturation rate saturation rate Compared with the relevant parameter comparison with low mediators constant. Based on these excellent performance parameters, King Kong
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