Display 3D model
Service hotline
+86 0755-83044319
Alternative equivalent for DIODES BC817-25Q-7-F | Slkor BC807-25 PNP General-purpose Transistors
Download datasheet Inquiry
Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
Slkor alternative equivalents to DIODES.
| DIODES | Slkor Replacements | ||
| Part Number | Part Number | Product Category | Package |
| SMAJ5.0A | SMAJ5.0A | TVS | SMA |
| SMAJ33CA-13-F | SMAJ33CA | TVS | SMA |
| BAT54C-7-F | BAT54C | Schottky Diodes | SOT-23 |
| TL431AS-13 | TL431 | Voltage References | SOT-23 |
| M8403DR-H | PAM8403 | Op Amps | SOP-16 |
| BC817-25Q-7-F | BC807-25 | Transistor | SOT-23 |
| BC817-40Q-7-F | BC817-40 | Transistor | SOT-23 |
| BAV99-13-F | BAV99 | Switching Diode | SOT-23 |
| BAV19W-7-F | BAV19W | Switching Diode | SOD-123 |
| BAV20W-7-F | BAV20W | Switching Diode | SOD-123 |
| BAV21W-7-F | BAV21W | Switching Diode | SOD-123 |
| SMBJ12A-13-F | SMBJ12A | TVS | SMB |
| SMBJ24CA-13-F | SMBJ24CA | TVS | SMB |
| SMAJ13CA-13-F | SMAJ13CA | TVS | SMA |
| SMAJ15CA-13-F | SMAJ15CA | TVS | SMA |
| SMAJ6.0A-13-F | SMAJ6.0A | TVS | SMA |
| US1M | US1M | Fast Recovery Diode | SMA |
| RS1M | RS1M | Fast Recovery Diode | SMA |
| MMBD4148-7-F | MMBD4148 | Switching Diode | SOT-23 |
| ZXMS6005DGQ | SL8402 | Driver IC | SOT-223 |
Description
PNP general-purpose transistor in a small SOT-23 Surface-Mounted Device (SMD) plastic package.
Features
● High current.
● Three current gain selections.
Applications
● General-purpose switching and amplification.
Quick reference data
|
Symbol |
Parameter |
Conditions |
Max |
Unit |
|
VCEO |
collector-emitter voltage |
open base |
45 |
V |
|
IC |
collector current |
0.5 |
A |
|
|
VCEsat |
collector-emitter saturation voltage |
IC = 500mA; IB = 50mA |
0.7 |
V |
| File Name | Title | Description |
|---|---|---|
| BC807-25.pdf | BC807-25 | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
Alternative equivalent for Onsemi BC817-25LT1G | Slkor BC807-25 PNP General-purpose Transistors
Alternative equivalent for DIODES BC817-40Q-7-F | Slkor BC817-40 NPN General-purpose Transistors
PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
Alternative equivalent for Onsemi SBC817-40LT1G | Slkor BC817-40 NPN General-purpose Transistors
The BCP51-16 is a high-performance PNP bipolar junction transistor designed for efficient switching and amplification in a variety of electronic applications. With a collector-emitter voltage rating (Vceo) of 45V and a maximum collector current (Ic) of 1A, it offers robust performance in a compact package. This transistor is engineered to handle up to 1.5W of power dissipation, ensuring reliability under varying operational conditions.
Alternative equivalent for STMicroelectronics MMBT5401 | Slkor MMBT5401 PNP Epitaxial Silicon Transistor
Alternative equivalent for STMicroelectronics MMBT3906 | Slkor MMBT3906 PNP Bipolar Transistor
The MMBTA42 is a PNP bipolar junction transistor (BJT) known for its robust performance and reliability in various electronic circuits. Encapsulated in the SOT-23 package, this transistor features a collector-emitter voltage (VCEO) rating of 300V, a maximum collector current (IC) of 0.3A, and a power dissipation (PD) of 0.35W. It has a transition frequency (fT) of 50MHz, making it suitable for applications that require efficient switching and moderate frequency amplification.
