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The US2M diode is a high-voltage rectifier designed to provide exceptional performance and reliability in diverse electronic applications. Featuring robust specifications and housed in a compact SMA package, the US2M diode meets the demands of modern electronic designs with efficiency and precision.
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SURFACE MOUNT ULTRAFAST RECOVERY RECTIFIER
Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
Description
The US2M diode is a high-voltage rectifier designed to provide exceptional performance and reliability in diverse electronic applications. Featuring robust specifications and housed in a compact SMA package, the US2M diode meets the demands of modern electronic designs with efficiency and precision.
Features
● For surface mounted applications
● Low profile package
● Glass Passivated Chip Junction
● Easy to pick and place
● High efficiency
● Lead free in comply with EU RoHS 2011/65/EU directives
Applications
● Power Supplies: Provides efficient rectification and voltage regulation in power supply circuits.
● Industrial Equipment: Suitable for use in industrial machinery where high voltage and current handling capabilities are required.
● Renewable Energy: Used in inverters and converters for solar and wind energy systems.
● Battery Chargers: Ensures efficient charging by minimizing power losses with low VF and IR characteristics.
● Automotive Electronics: Reliable performance in automotive systems requiring high-voltage rectification and switching.
| File Name | Title | Description |
|---|---|---|
| US2M.pdf | US2M | - |
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
This diode features a peak reverse voltage rating (VRRM) of 1000V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.65V. Its fast reverse recovery time (trr) of just 75ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 1000V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.65V. Its fast reverse recovery time (trr) of just 75ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 200V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1V. Its fast reverse recovery time (trr) of just 50ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 400V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.3V. Its fast reverse recovery time (trr) of just 50ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 600V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.65V. Its fast reverse recovery time (trr) of just 75ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 200V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1V. Its fast reverse recovery time (trr) of just 50ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 400V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.3V. Its fast reverse recovery time (trr) of just 50ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 600V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.65V. Its fast reverse recovery time (trr) of just 75ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
