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The US2D diode is an advanced semiconductor device engineered to deliver precise voltage regulation and efficient power management across a wide range of applications. With its robust specifications and compact SMA package, the US2D is the ideal choice for demanding electronic designs.
Download datasheet InquirySURFACE MOUNT ULTRAFAST RECOVERY RECTIFIER
Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
Description
The US2D diode is an advanced semiconductor device engineered to deliver precise voltage regulation and efficient power management across a wide range of applications. With its robust specifications and compact SMA package, the US2D is the ideal choice for demanding electronic designs.
Features
● For surface mounted applications
● Low profile package
● Glass Passivated Chip Junction
● Easy to pick and place
● High efficiency
● Lead free in comply with EU RoHS 2011/65/EU directives
Applications
● Power Supplies: Ensures stable voltage regulation and efficiency in power supply units.
● Rectification: Converts AC to DC with minimal power loss, thanks to low VF and IR characteristics.
● Switching Circuits: Enables fast switching operations with a quick trr of 50ns.
● Signal Conditioning: Provides reliable signal integrity and minimal leakage currents in sensitive electronic circuits.
● Consumer Electronics: Suitable for use in various consumer electronics where space-saving and high reliability are critical.
| File Name | Title | Description |
|---|---|---|
| US2D.PDF | US2D | - |
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
This diode features a peak reverse voltage rating (VRRM) of 200V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1V. Its fast reverse recovery time (trr) of just 50ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 400V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.3V. Its fast reverse recovery time (trr) of just 50ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 600V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.65V. Its fast reverse recovery time (trr) of just 75ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 1000V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.65V. Its fast reverse recovery time (trr) of just 75ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 200V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1V. Its fast reverse recovery time (trr) of just 50ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 400V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.3V. Its fast reverse recovery time (trr) of just 50ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 600V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.65V. Its fast reverse recovery time (trr) of just 75ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 1000V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.65V. Its fast reverse recovery time (trr) of just 75ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
