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Introducing the ES1D ultra fast recovery rectifier, engineered to deliver exceptional performance in high-speed rectification applications. Encased in a compact SMA package, this rectifier combines efficiency with reliability to meet the demands of modern electronic designs.
Download datasheet InquiryChinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
● Low profile surface mounted package.
● Glass passivated junction.
● Ultra fast recovery time for high efficiency.
● Plastic package has underwriters laboratory flammability classification 94V-0.
● High temperature soldering:250C /10 seconds at terminals.
● RoHS compliant.
Applications
● Switching Power Supplies: Perfect for fast-switching power supply designs requiring high efficiency and rapid response times.
● Voltage Regulation: Well-suited for rectification and voltage regulation in DC-DC converters and voltage multiplier circuits.
● Telecommunications: Ensures reliable performance in telecom equipment such as routers, switches, and base stations.
● Consumer Electronics: Ideal for use in consumer electronic devices requiring efficient rectification and energy conversion.
| File Name | Title | Description |
|---|---|---|
| ES1D.pdf | ES1D | - |
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This diode features a peak reverse voltage rating (VRRM) of 200V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1V. Its fast reverse recovery time (trr) of just 35ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 200V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1V. Its fast reverse recovery time (trr) of just 50ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 400V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.3V. Its fast reverse recovery time (trr) of just 50ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 600V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.65V. Its fast reverse recovery time (trr) of just 75ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 1000V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.65V. Its fast reverse recovery time (trr) of just 75ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 200V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1V. Its fast reverse recovery time (trr) of just 50ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 400V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.3V. Its fast reverse recovery time (trr) of just 50ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 600V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.65V. Its fast reverse recovery time (trr) of just 75ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
