Samsung DRAM Yield Rate Exceeds 50%, Plans Mass Production of HBM4 in Second Half

Industry Trends|Industry Trends|

2025-07-24 17:15:53 942

Samsung Electronics has made significant progress in its 10-nanometer-class sixth-generation (1c) DRAM process, with the yield rate surpassing 50%. This breakthrough signals Samsung's potential to enhance its competitiveness in the high-performance memory market and plans to commence mass production of the sixth-generation High Bandwidth Memory (HBM4) in the second half of this year.

The 1c DRAM process technology node is approximately 11-12 nanometers. Compared to the current mainstream fourth-generation (1a, ~14nm) and fifth-generation (1b, ~12-13nm) DRAM, the 1c process not only offers higher density but also effectively reduces power consumption. Additionally, the die thickness is thinner, which will facilitate stacking more layers of memory in HBM4, significantly increasing capacity and bandwidth density.

Samsung has been fully dedicated to the development of 1c DRAM since last year, led by DRAM Development Head Hwang Sang-joon in the redesign effort. He pointed out that the fundamental reason for the initial failure to meet performance and yield targets lay in flaws in the early design architecture. He emphasized that thorough corrections starting from the design phase were essential for progress. This high-level intervention to adjust the design process demonstrates Samsung's determination to regain technological leadership.

Samsung also plans to supply HBM4 samples in the second half of the year, positioning "Customized HBM" as a core new strategy.

HBM4 allows for the integration of logic dies with the DRAM stack. By optimizing the overall architecture through the foundry process, it aims to provide efficient solutions tailored to the needs of different applications. Furthermore, Samsung will apply its self-developed 4-nanometer process to the logic die at the base of the HBM4 stack to enhance overall performance and integration flexibility.

About SLKOR：

SLKOR, headquartered in Shenzhen, China, is a rapidly emerging national high-tech enterprise in the power semiconductor sector. With R&D centers in Beijing and Suzhou, its core technical team originates from Tsinghua University. As an innovator in silicon carbide (SiC) power device technology, SLKOR's products are widely used in new energy vehicles, photovoltaic power generation, industrial IoT, and consumer electronics, providing critical semiconductor solutions to over 10,000 clients globally.

The company delivers more than 2 billion units annually, with its SiC MOSFETs and 5th-generation ultrafast recovery SBD diodes setting industry benchmarks in efficiency ratio and thermal stability. SLKOR holds over 100 invention patents and offers 2,000+ product models, continually expanding its IP portfolio across power devices, sensors, and power management ICs. Certifications including ISO 9001, EU RoHS/REACH, and CP65 compliance demonstrate the company's steadfast commitment to technological innovation, lean manufacturing, and sustainable development.

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Samsung DRAM Yield Rate Exceeds 50%, Plans Mass Production of HBM4 in Second Half

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